The Defence Research and Development Organisation has achieved a major breakthrough in developing indigenous Gallium Nitride semiconductor technology. This technology is designed for high-frequency military applications, including radars and electronic warfare.

The successful fabrication and demonstration of certain components have been confirmed, including X-band Monolithic Microwave Integrated Circuits and S-band GaN High Electron-Mobility Transistor power amplifiers.

Further details on this development are available from the Ministry of Defence report, which outlines the specifics of the achievement and its implications for defence electronics.